| PART |
Description |
Maker |
| FQPF10N60C FQP10N60C |
600V N-Channel Advance Q-FET C-Series
600V N-Channel MOSFET
|
FAIRCHILD[Fairchild Semiconductor]
|
| FQI10N60C FQB10N60C FQB10N60CTM FQI10N60CTU |
600V N-Channel MOSFET
600V N-Channel Advance Q-FET C-Series
|
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FAIRCHILD[Fairchild Semiconductor]
|
| FQI5N60C FQB5N60C FQB5N60CTM |
600V N-Channel MOSFET 4.5 A, 600 V, 2.5 ohm, N-CHANNEL, Si, POWER, MOSFET
600V N-Channel Advance QFET C-Series
|
Fairchild Semiconductor, Corp.
FAIRCHILD[Fairchild Semiconductor]
|
| FQA6N90C |
900V N-Channel Advance Q-FET C-Series
|
Fairchild Semiconductor
|
| FQD5N60CTM |
600V N-Channel Advance QFET C-Series; Package: TO-252(DPAK); No of Pins: 2; Container: Tape & Reel 2.8 A, 600 V, 2.5 ohm, N-CHANNEL, Si, POWER, MOSFET
|
Fairchild Semiconductor, Corp.
|
| FQU6N50C FQD6N50C FQD6N50CTF FQD6N50CTM |
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary planar stripe, DMOS technology
500V N-Channel Advance Q-FET C-Series
|
Fairchild Semiconductor Corporation
FAIRCHILD[Fairchild Semiconductor]
|
| FQPF9N25C FQP9N25C FQP9N25CTSTU |
250V N-Channel MOSFET 8.8 A, 250 V, 0.43 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
250V N-Channel Advance Q-FET C-Series
|
Fairchild Semiconductor, Corp.
FAIRCHILD[Fairchild Semiconductor]
|
| FQPF10N20C FQPF10N20CNL |
200V N-Channel Advance Q-FET C-Series
200V N-Channel MOSFET 9.5 A, 200 V, 0.36 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
|
FAIRCHILD SEMICONDUCTOR CORP
Fairchild Semiconductor, Corp.
FAIRCHILD[Fairchild Semiconductor]
|
| FQI6N40C FQB6N40C FQB6N40CTM FQI6N40CTU |
400V N-Channel MOSFET
400V N-Channel Advance Q-FET C-Series
|
FAIRCHILD[Fairchild Semiconductor]
|
